型号:

SI5904DC-T1-E3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET DUAL N-CH 20V 3.1A 1206-8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
SI5904DC-T1-E3 PDF
产品目录绘图 DC-T1-E3 Series 1206-8
标准包装 3,000
系列 TrenchFET®
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 3.1A
开态Rds(最大)@ Id, Vgs @ 25° C 75 毫欧 @ 3.1A,4.5V
Id 时的 Vgs(th)(最大) 1.5V @ 250µA
闸电荷(Qg) @ Vgs 6nC @ 4.5V
输入电容 (Ciss) @ Vds -
功率 - 最大 1.1W
安装类型 表面贴装
封装/外壳 8-SMD,扁平引线
供应商设备封装 1206-8 ChipFET?
包装 带卷 (TR)
产品目录页面 1663 (CN2011-ZH PDF)
其它名称 SI5904DC-T1-E3TR
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